TCRT5000(L)Vishay SemiconductorsReflective Optical Sensor with Transistor OutputDescriptionThe TCRT5000(L) has a compact construction wherethe emitting-light source and the detector are arrangedin the same direction to sense the presence of an ob-ject by using the reflective IR beam from the object. The operating wavelength is 950 mm. The detectorconsists of a phototransistor.ApplicationsDPosition sensor for shaft encoderDDetection of reflective material such as paper, IBM cards, magnetic tapes etc.DLimit switch for mechanical motions in VCRDGeneral purpose – wherever the space is limited1511694 9442FeaturesCADSnap-in construction for PCB mountingDPackage height: 7 mmDPlastic polycarbonate housing construction which prevents crosstalkDL = long leadsDCurrent Transfer Ratio (CTR) of typical 10%Top viewECOrder Instruction Ordering CodeTCRT5000TCRT5000(L)Sensing Distance12 mm12 mmRemarksLeads (3.5 mm)Long leads (15 mm)Document Number 83760Rev. A4, 03–Jul–00www.vishay.com1 (8)TCRT5000(L)Vishay SemiconductorsAbsolute Maximum Ratings Input (Emitter)ParameterReverse voltageForward currentForward surge currentPower dissipationJunction temperatureTest ConditionsSymbolVRIFIFSMPVTjValue5603100100UnitVmAAmW°Ctp ≤ 10 mATamb ≤ 25°COutput (Detector)ParameterCollector emitter voltageEmitter collector voltageCollector currentPower dissipationJunction temperatureTest ConditionsSymbolVCEOVECOICPVTjValue705100100100UnitVVmAmW°CTamb ≤ 55°CSensorParameterTotal power dissipationOperation temperature rangeStorage temperature rangeSoldering temperatureTest ConditionsTamb ≤ 25°CSymbolPtotTambTstgTsdValue200–25 to +85–25 to +100260UnitmW°C°C°C2 mm from case, t ≤ 10 swww.vishay.com2 (8)Document Number 83760Rev. A4, 03–Jul–00TCRT5000(L)Vishay SemiconductorsElectrical Characteristics (Tamb = 25°C)Input (Emitter)ParameterForward voltageJunction capacitanceTest ConditionsIF = 60 mAVR = 0 V, f = 1 MHzSymbolVFCjMin.Typ.1.2550Max.1.5UnitVpFOutput (Detector)ParameterCollector emitter voltageEmitter collector voltageCollector dark currentTest ConditionsIC = 1 mAIE = 100 mAVCE = 20 V, IF = 0, E = 0SymbolVCEOVECOICEOMin.707Typ.Max.UnitVVnA10200SensorParameterCollector currentTest ConditionsVCE = 5 V, IF = 10 mA, D = 12 mmIF = 10 mA, IC = 0.1 mA, D = 12 mmSymbolIC 1,2)Min.0.5Typ.1Max.2.10.4UnitmAVCollector emitter VCEsat 1,2)saturation voltage1) See test circuit2) Test surface: Mirror (Mfr. Spindler a. Hoyer, Part No 340005)94 922696 12314IFICVCCAFlat Mirror∅= 22.5 mmRem. 2d = working distanceD = Distance12 ±0.27.0 ±0.2 = package heightFigure 1. Test circuitFigure 2. Test circuitDocument Number 83760Rev. A4, 03–Jul–00www.vishay.com3 (8)TCRT5000(L)Vishay SemiconductorsTypical Characteristics (Tamb = 25_C, unless otherwise specified)300P t o t – Total Power Dissipation ( mW )10.000VCE=5VIC – Collector Current ( mA )Coupled device1.0002000.100100PhototransistorIR-diode0.0100095 110712550751000.0010.196 117631.010.0100.0Tamb – Ambient Temperature ( °C )IF – Forward Current ( mA )Figure 3. Total Power Dissipation vs. Ambient Temperature1000.0Figure 6. Collector Current vs. Forward Current 10.00IC – Collector Current ( mA ) 1.00IF=50mA20mA10mA5mA0.102mA1mA0.010.196 11764I F – Forward Current ( mA )100.010.01.00.1096 118620.20.40.60.81.01.21.41.61.82.0VF – Forward Voltage ( V )1.010.0100.0VCE – Collector Emitter Voltage ( V )Figure 4. Forward Current vs. Forward Voltage Figure 7. Collector Emitter Saturation Voltage vs. Collector Current100.0CTR – Current Transfer Ratio ( % )CTR r e l – Relative Current Transfer Ratio1.21.11.00.90.80.70.6–30–20–100102030405060708090100Tamb – Ambient Temperature ( °C )VCE=5VIF=20mAVCE=5V10.01.00.10.196 117651.010.0100.096 11762IF – Forward Current ( mA )Figure 5. Rel. Current Transfer Ratio vs. Ambient Temp.Figure 8. Current Transfer Ratio vs. Forward CurrentDocument Number 83760Rev. A4, 03–Jul–00www.vishay.com4 (8)TCRT5000(L)Vishay Semiconductors1.2I C r e l – Relative Collector Current1.00.80.60.40.20096 11766VCE=10VIC=20mA246810121416d – Working Distance ( mm )Figure 9. Relative Collector vs. DistanceTop viewFigure 10. Footprint96 12371Document Number 83760Rev. A4, 03–Jul–00www.vishay.com5 (8)TCRT5000(L)
Vishay Semiconductors
Dimensions of TCRT5000 in mm
96 12073
www.vishay.com6 (8)Document Number 83760
Rev. A4, 03–Jul–00
TCRT5000(L)
Vishay Semiconductors
Dimensions of TCRT5000L in mm
95 11267
Document Number 83760Rev. A4, 03–Jul–00www.vishay.com
7 (8)
TCRT5000(L)
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1.Meet all present and future national and international statutory requirements.
2.Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment.It is particular concern to control or eliminate releases of those substances into the atmosphere which are known asozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs andforbid their use within the next ten years. Various national and international initiatives are pressing for an earlier banon these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use ofODSs listed in the following documents.
1.Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively2.Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the EnvironmentalProtection Agency (EPA) in the USA3.Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depletingsubstances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.Parameters can vary in different applications. All operating parameters must be validated for each customer applicationby the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, thebuyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly orindirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, GermanyTelephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com8 (8)Document Number 83760
Rev. A4, 03–Jul–00
This datasheet has been download from:
www.datasheetcatalog.comDatasheets for electronics components.