RESET CIRCUIT

专利名称：RESET CIRCUIT发明人：MASAFUMI NAGAYA申请号：US09239996申请日：19990129

公开号：US20020000852A1公开日：20020103

专利附图：

摘要：The reset circuit comprises the P-channel MOS transistor , the resistive element, the N-channel MOS transistor , and the resistive element . One electrode of the P-channel MOS transistor is supplyed a source voltage VDD, and other electrode and thegate electrode thereof is connected to the node . One node of the resistive element is

connected to the node , and other node thereof is supplyed the ground voltage VSS. Oneelectrode of the N-channel MOS transistor is connected to the output node , geteelectrode thereof connected to the node , and other electrode thereof is supplyed theground voltage VSS. One node of resistive element is supplyed the source voltage VDD,and other node thereof is connected to the output node

申请人：NAGAYA MASAFUMI

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