专利名称：Process for forming pattern and method for
producing liquid crystal display apparatus
发明人：Shusaku Kido申请号：US11268811申请日：20051107
公开号：US20060060560A1公开日：20060323
专利附图：
摘要：A process for forming a pattern contains steps of: forming a first mask patternon a film to be etched on a substrate; forming a first pattern of the film to be etched byusing the first mask pattern as a mask; forming a second mask pattern having a plane
shape different from that of the first mask pattern by deforming the first mask pattern;and forming a second pattern of the film to be etched different from the first pattern byusing the second mask pattern. By applying the process for forming a pattern, forexample, to the formation of a semiconductor layer and source and drain electrodes of aTFT substrate of a liquid crystal display apparatus, the above-stated formation requiringtwo photoresist process steps in a conventional manufacturing method of a liquid crystaldisplay apparatus can be carried out by only one process step, thereby reducingmanufacturing cost thereof.
申请人：Shusaku Kido
地址：Izumi-shi JP
国籍：JP
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