Method for forming polycrystalline silicon layer a

专利名称：Method for forming polycrystalline silicon

layer and method for fabricating thin filmtransistor

发明人：Jong-Hoon Yi,Sang-Gul Lee,Won-Kyu Park申请号：US10005124申请日：20011207

公开号：US20020042168A1公开日：20020411

专利附图：

摘要：A method for forming a polycrystalline silicon layer for TFT according to thepresent invention includes steps of: depositing an amorphous silicon layer and a silicon

oxidation layer on a substrate in this order; and implanting semiconductor ions into theamorphous silicon layer and the silicon oxidation layer while heating the substrate,thereby converting the amorphous silicon layer into a polycrystalline silicon layer, andforming an amorphous oxidation layer between the amorphous silicon layer and thesilicon oxidation layer.

申请人：YI JONG-HOON,LEE SANG-GUL,PARK WON-KYU

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