METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURES IN

专利名称：METHOD FOR FABRICATING

SEMICONDUCTOR STRUCTURES INCLUDINGTRANSISTOR CHANNELS HAVING

DIFFERENT STRAIN STATES, AND RELATEDSEMICONDUCTOR STRUCTURES

发明人：Mariam Sadaka,Bich-Yen Nguyen,Ionut Radu申请号：US14830332申请日：20150819

公开号：US20160086974A1公开日：20160324

专利附图：

摘要：Methods of fabricating a semiconductor structure include implanting ion into asecond region of a strained semiconductor layer on a multi-layer substrate to amorphizea portion of crystalline semiconductor material in the second region of the strainedsemiconductor layer without amorphizing a first region of the strained semiconductorlayer. The amorphous region is recrystallized, and elements are diffused within thesemiconductor layer to enrich a concentration of the diffused elements in a portion ofthe second region of the strained semiconductor layer and alter a strain state thereinrelative to a strain state of the first region of the strained semiconductor layer. A firstplurality of transistor channel structures are formed that each comprise a portion of thefirst region of the semiconductor layer, and a second plurality of transistor channelstructures are formed that each comprise a portion of the second region of thesemiconductor layer.

申请人：Soitec

地址：Crolles Cedex FR

国籍：FR

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