专利名称：High Trigger Current Silicon Controlled
Rectifier
发明人：Bart Sorgeloos申请号：US12500185申请日：20090709
公开号：US20100008002A1公开日：20100114
专利附图：
摘要：An ESD protection circuit including an SCR having at least a PNP transistor andat least a NPN transistor such that said PNP transistor is coupled to an anode and theNPN transistor is coupled to a cathode. The circuit also includes a first resistor coupledbetween the anode and the base of the pnp transistor and a second resistor coupledbetween the cathode and the base of the npn transistor. A parasitic distributed bipolartransistor is formed between said first and second transistor to control triggering of theSCR.
申请人：Bart Sorgeloos
地址：Pittem BE
国籍：BE
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