专利名称：Low temperature deposition of complex
metal oxides (CMO) memory materials fornon-volatile memory integrated circuits
发明人：Makoto Nagashima,Darrell Rinerson,Steve K.
Hsia,Larry Matheny
申请号：US10387773申请日：20030313公开号：US07063984B2公开日：20060620
专利附图：
摘要：A memory fabrication apparatus includes a pair of targets arranged so as to bespaced apart from one another within a closed vacuum vessel, each target of said pair oftargets having a sputtering surface facing the sputtering surface of the other target ofsaid pair of targets; and substrate holder adapted to receive facing target sputtering aCMO material on an electrode.
申请人：Makoto Nagashima,Darrell Rinerson,Steve K. Hsia,Larry Matheny
地址：Nishi-Tokyo JP,Cupertino CA US,San Jose CA US,Fremont CA US
国籍：JP,US,US,US
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