Liquid ejection device and method of producing the

专利名称：Liquid ejection device and method of

producing the same

发明人：Riki Matsuda,Shigeru Suzuki申请号：US09349695申请日：19990708公开号：US06513917B1公开日：20030204

专利附图：

摘要：A silicon single crystal substrate is formed with a plurality of channels that arepartitioned by a plurality of partition walls and that are arranged at a pitch of 40 &mgr;mor less, for example. A filler material is then introduced into the channels to a height that

matches the upper edges of the partition walls. After the filler material is hardened byheating a cover film is deposited to a thickness of 5 &mgr;m or less on the upper surfaceof the filler material and on the upper edges of the partition walls. As a result, the coverfilm has the same, flat shape as the upper surface of the filler material and the upperedges of the partition walls. Next, the filler material is removed so that the cover filmremains covering the channels. Next, electrodes are formed on the cover film. A drivevoltage is applied to a desired electrode to deform the cover film at a correspondingarea, whereupon pressure is applied to liquid in the corresponding channel, and liquid isejected from an aperture that is provided at the front end of the subject channel. Thus,the compact and high density liquid ejection device with a large deformation amount andwith good drive efficiency can be easily manufactured.

申请人：BROTHER KOGYO KABUSHIKI KAISHA

代理机构：Pitney, Hardin, Kipp & Szuch LLP

更多信息请下载全文后查看