Method for manufacturing thin film transistor and

专利名称：Method for manufacturing thin film

transistor and method for manufacturingdisplay device

发明人：Hidekazu Miyairi,Takafumi Mizoguchi申请号：US13175990申请日：20110705公开号：US08709836B2公开日：20140429

专利附图：

摘要：An object is to provide a method for manufacturing a thin film transistor and adisplay device with reduced number of masks, in which adverse effects of optical current

are suppressed. A manufacturing method comprises forming a stack including, frombottom to top, a light-blocking film, a base film, a first conductive film, a first insulatingfilm, a semiconductor film, an impurity semiconductor film, and a second conductive film;performing first etching on the whole thickness of the stack using a first resist maskformed over it; forming a gate electrode layer by side etching the first conductive film ina second etching; forming a second resist mask over the stack; and performing thirdetching down to the semiconductor film, and partially etching it, using the second resistmask to form a source and drain electrode layer, a source and drain region, and asemiconductor layer.

申请人：Hidekazu Miyairi,Takafumi Mizoguchi

地址：Kanagawa JP,Kanagawa JP

国籍：JP,JP

代理机构：Fish & Richardson P.C.

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