专利名称：Nwell to nwell isolation发明人：Shaoping Tang,Zhiqiang Wu申请号：US11343695申请日：20060131
公开号：US20070176263A1公开日：20070802
摘要：Multiple blanket implant one or more p-type dopants, which are injected intosemiconductor substrate, to be performed, in order to separate in the substratebetween the subsequent areas NWELL. It executes code-pattern and injects
intrabasement punch through isolation area p-type dopant is made to be implanted todepth and be sufficiently separated the regions NWELL. The regions NWELL that theconcentration of this increased p-type dopant helps to leak between mitigation arecloser to together as the regions NWELL, to increase packed density.
申请人：Shaoping Tang,Zhiqiang Wu
地址：Plano TX US,Plano TX US
国籍：US,US
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