MPS2907A

TO-92 Plastic-Encapsulate Transistors

TO-92

1. EMITTER 2. BASE

3. COLLECTOR

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TRANSISTOR (PNP) =

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=FEATURES

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Complementary NPN Type available (MPS2222A) =

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== MAXIMUM RATINGS (T=25℃ unless otherwise noted)

MPS2907A

A

Symbol Parameter Value Units VCBO VCEO VEBO IC PC TJ Tstg

Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature

-60 -60 -5 -0.6 0.625 150 -55-150

V V V A W ℃ ℃

1 2 3

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain

Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IEBO hFE(1) hFE(2) hFE(3)

Collector-emitter saturation voltage

VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT td tr tS tf L

Test conditions

MIN

TYP

MAX

UNIT

IC=-10μA,IE0 -60 V IC=-10mA,IB0 -60 V IE=-10μA,IC0 -5 V VCB=-50V,IE0 -10 n A VCE=-30V,VEB(off)-0.5V -50 nA VEB=-3V,IC0 -10 nA VCE=-10V,IC-0.1mA 78 VCE=-10V,IC-150mA 100 300 VCE=-10V,IC-500mA 52 IC=-150mA,IB-15mA -0.4 V IC=-500mA,IB-50mA -0.67 V Base-emitter saturation voltage Transition frequency Delay time Rise time Storage time Fall time

IC=-150mA,IB-15mA -1 V VCE=-20V,IC-50mA,f100MHz 200 VCC=-30V,Ic=-150mA,IB1=-15mAVCC=-6V,Ic=-150mA, IB1=IB2=-15mA

MHzIC=-500mA,IB-50mA -1.2 V 10 nS 25 nS 225 nS 60 nS CLASSIFICATION OF hFE(2)

Rank Range

H

100-200 200-300

Typical Characteristics MPS2907A