ISSUE 3 - JANUARY 1996FEATURES*60Volt VDS*RDS(ON) = 5ΩBS170FSDGPARTMARKING DETAIL – MVSOT23ABSOLUTE MAXIMUM RATINGS.PARAMETERDrain-Source VoltageContinuous Drain Current at Tamb=25°CPulsed Drain CurrentGate Source Voltage Power Dissipation at Tamb=25°COperating and Storage Temperature RangeSYMBOLVDSIDIDMVGSPtotTj:TstgVALUE600.153± 20330-55 to +150UNITVmAAVmW°CELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).PARAMETERDrain-Source Breakdown VoltageGate-Source ThresholdVoltageGate-Body LeakageZero Gate Voltage DrainCurrentStatic Drain-Source On-StateResistance (1)Forward Transconductance(1)(2)Input Capacitance (2)Turn-On Delay Time (2)(3)Turn-Off Delay Time (2)(3)SYMBOLBVDSSVGS(th)IGSSIDSSRDS(on)gfsCisstd(on)td(off)200601010MIN.TYP.MAX.UNITCONDITIONS.600.8903100.55VVnAµAΩmSpFnsnsVDD ≈-15V, ID=600mAID=100µA, VGS=0VID=1mA, VDS= VGSVGS=15V, VDS=0VVDS=25V, VGS=0VVGS=10V, ID=200mAVDS=10V, ID=200mAVDS=10V, VGS =0V,f=1MHz (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generatorSpice parameter data is available upon request for this deviceFor typical characteristics graphs refer to ZVN3306F datasheet.
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