专利名称：Integration processes for fabricating a
conductive metal oxide gate ferroelectricmemory transistor
发明人：Tingkai Li,Sheng Teng Hsu,Bruce D. Ulrich申请号：US11215521申请日：20050830公开号：US07329548B2公开日：20080212
专利附图：
摘要：A method of fabricating a conductive metal oxide gate ferroelectric memorytransistor includes forming an oxide layer a substrate and removing the oxide layer in a
gate area; depositing a conductive metal oxide layer on the oxide layer and on theexposed gate area; depositing a titanium layer on the metal oxide layer; patterning andetching the titanium layer and the metal oxide layer to remove the titanium layer and themetal oxide layer from the substrate except in the gate area; depositing, patterning andetching an oxide layer to form a gate trench; depositing and etching a barrier insulatorlayer to form a sidewall barrier in the gate trench; removing the titanium layer from thegate area; depositing, smoothing and annealing a ferroelectric layer in the gate trench;depositing, patterning and etching a top electrode; and completing the conductive metaloxide gate ferroelectric memory transistor.
申请人：Tingkai Li,Sheng Teng Hsu,Bruce D. Ulrich
地址：Vancouver WA US,Camas WA US,Beaverton OR US
国籍：US,US,US
代理机构：Sharp Laboratories of America, Inc.
代理人：Robert D. Varitz
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